NPN EPITAXIAL PLANAR SILICON TRANSISTOR

High-Current Switching Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Surface mount type. Applications • Relay drivers, lamp drivers, motor drivers, inverters.

文件：48.49 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：321.02 Kbytes 页数：2 Pages

ISC

无锡固电

Medium power transistor (30V, 2A)

Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2113 Applications Low frequency amplifier

文件：45.98 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon NPN triple diffusion planar type

For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

文件：57.02 Kbytes 页数：2 Pages

PANASONIC

松下

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf 200 ns • Wide safe operation area

文件：67.64 Kbytes 页数：3 Pages

PANASONIC

松下

2SC5932

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：52.85 Kbytes 页数：3 Pages

SANYO

三洋

2SC5933

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：52.65 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

文件：71.92 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

文件：71.92 Kbytes 页数：3 Pages

PANASONIC

松下