Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications

文件：142.31 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：Switching regulators\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available Collector Current IC 1 A \nCollector power dissipation PC 1 W \nCollector-Base Voltage VCBO 600 V \nCollector-emitter voltage VCEO 285 V ;

Toshiba

东芝

Package：SC-71；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 600V 1A MSTM

Toshiba Semiconductor and Storage

Package：SC-71；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 600V 1A MSTM

Toshiba Semiconductor and Storage