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2SC5624VH-TL-E

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz

文件:198.97 Kbytes 页数:7 Pages

RENESAS

瑞萨

2SC5625

SILICON EPITAXIAL

Overview 2SC5625 Ultra-compact resin-sealed silicon NPN epitaxy Type transistor, designed and manufactured for high breakdown voltage. Widely used for downsizing of sets and high-density mounting You. Special length • Ultra-small outer shape enables miniaturization of sets and high-density moun

文件:61.85 Kbytes 页数:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SC5625

SMALL-SIGNAL TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SC5625 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.5V max ● Super mini package for easy m

文件:50.9 Kbytes 页数:2 Pages

ISAHAYA

谏早电子

2SC5626

TRANSISTOR

[Isahaya] For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type)

文件:100.37 Kbytes 页数:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SC5626

TRANSISTOR

DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial type transistor. It is designed for high frequency amplify application. FEATURE • Super mini package for easy mounting • High gain band width product APPLICATION Small type machine high frequency a

文件:283.63 Kbytes 页数:4 Pages

ISAHAYA

谏早电子

2SC5628

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)

文件:69.31 Kbytes 页数:10 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SC5629

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features • Super compact package; (1.6 × 0.8 × 0.7mm) • High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, VCE = 1 V)

文件:73.43 Kbytes 页数:10 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SC5621

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件:188.44 Kbytes 页数:4 Pages

ISAHAYA

谏早电子

2SC5621_13

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件:188.44 Kbytes 页数:4 Pages

ISAHAYA

谏早电子

2SC5623

High gain bandwidth product

文件:46.05 Kbytes 页数:8 Pages

HITACHI-METALS

日立金属

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
20+
SOT343
120000
原装正品 可含税交易
询价
ROHM
24+
60000
询价
RENESAS/瑞萨
23+
SOT-343
57800
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
RENESAS/瑞萨
2511
SOT-343
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
RENESAS/瑞萨
22+
SOT343
20000
只做原装
询价
RENESAS/瑞萨
23+
SOT-343
360000
专业供应MOS/LDO/晶体管/有大量价格低
询价
RENESAS
17+
SOT343
3419
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
RENESAS
2023+
SOT343
8800
正品渠道现货 终端可提供BOM表配单。
询价
26+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
询价
RENESAS
23+
SOT343
3419
全新原装正品现货,支持订货
询价
更多2SC562供应商 更新时间2026-10-12 14:01:00