For Low Frequency Amplify Application Sillcon Npn Epitaxial Type

[Isahaya Electronics] DESCRIPTION 2SC5620 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency voltage application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain, low noise. • Can operate at low voltage. • Super mini packag

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ETCList of Unclassifed Manufacturers

未分类制造商

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5620 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency voltage application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain, low noise. • Can operate at low voltage. • Super mini package for easy mounting. A

文件：238.54 Kbytes 页数：5 Pages

ISAHAYA

谏早电子

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy mounting. APPLICATION

文件：132.36 Kbytes 页数：5 Pages

ISAHAYA

谏早电子

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

[Isahaya Electronics] DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy

文件：133.58 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features • High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO)

文件：46.87 Kbytes 页数：1 Pages

PANASONIC

松下

Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

文件：164.86 Kbytes 页数：11 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage • High Switching Speed • Low Saturation Voltage • Wide area of safe operation • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Character display horizontal deflection output

文件：285.46 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 26 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz

文件：176.61 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18dB typ. , NF = 1.2dB typ. at f = 1.8GHz

文件：105.63 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz

文件：198.97 Kbytes 页数：7 Pages

RENESAS

瑞萨