isc Silicon NPN Power Transistor

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ISC

无锡固电

RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz

2SC5551A is RF Transistor, 30 V, 300 mA, fT = 3.5 GHz, NPN Single PCP for High-Frequency Medium-Output Amplifier Applications. • High fT : (fT=3.5GHz typ)\n• Large current : (IC=300mA)\n• Large allowable collector dissipation (1.3W max);

ONSEMI

安森美半导体

Silicon NPN triple diffusion mesa type

Power Transistors\nSilicon NPN triple diffusion mesa type\nFor horizontal deflection output■ •High breakdown voltage, and high reliability through the use of a glass passivation layer\n•High-speed switching\n•Wide safe operation area;

Panasonic

松下

NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications

ONSEMI

安森美半导体

Package：TO-243AA；包装：带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 30V 3.5GHZ PCP

ONSEMI

安森美半导体

Package：TO-243AA；包装：带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 30V 3.5GHZ PCP

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 10V 0.08A MINI3

PANASONIC

松下