High-Voltage Switching Applications NPN Triple Diffused Planar Silicon Transistor

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SUNSPIRIT

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 700V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.5V(Max) @IC=5A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

文件：241.29 Kbytes 页数：2 Pages

ISC

无锡固电

High-Voltage Switching Applications

High-Voltage Switching Applications · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode.

文件：41.61 Kbytes 页数：4 Pages

SANYO

三洋

SOT423

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

SOT143

RENESAS

瑞萨

上传：深圳市正纳电子有限公司