2SC5095

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.8dB,|S21e|2=7.5dB(f=2GHz)

2SC5095

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC5095

isc Silicon NPN Low Noise Bipolar Transistor

DESCRIPTION ·LowNoiseFigure NF=1.4dBTYP.@VCE=6V,IC=3mA,f=1GHz ·HighGain ︱S21︱2=13dBTYP.@VCE=6V,IC=7mA,f=1GHz APPLICATIONS ·Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers.

2SC5095-O

VHF~UHF Band Low Noise Amplifier Applications

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.8dB,|S21e|2=7.5dB(f=2GHz)

2SC5096

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications ●Lownoisefigure,highgain. ●NF=1.8dB,|S21e|2=7.5dB(f=2GHz)

2SC5096

Radio-frequency bipolar transistor; Collector Current IC 0.015 A \nCollector power dissipation PC 100 mW \nJunction temperature Tj 125 ℃ \nCollector-emitter voltage VCEO 10 V \n;

Application Scope：VHF/UHF band low noise amplifier\nPolarity：NPN\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\n

2SC5096FT

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.8dB,|S21e|2=7.5dB(f=2GHz)

2SC5097

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure,highgain. •NF=1.8dB,|S21e|2=10dB(f=2GHz)

2SC5098

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS

2SC5099

Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SA1907) Application:AudioandGeneralPurpose