NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

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NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE68519 / 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc

文件：1.76463 Mbytes 页数：9 Pages

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

文件：241.06 Kbytes 页数：12 Pages

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

文件：241.06 Kbytes 页数：12 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

文件：61.48 Kbytes 页数：10 Pages

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

FEATURES • Small Package • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation

文件：52.46 Kbytes 页数：8 Pages

NEC

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NPN EPITAXIAL SILICON RF TRANSISTOR

FEATURES • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super mini mold Package

文件：537.63 Kbytes 页数：6 Pages

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NPN EPITAXIAL SILICON RF TRANSISTOR

FEATURES • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package

文件：190.45 Kbytes 页数：9 Pages

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NPN EPITAXIAL SILICON RF TRANSISTOR

FEATURES • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package

文件：190.45 Kbytes 页数：9 Pages

RENESAS

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HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

FEATURES • Small Package • High Gain Bandwidth Product (fT = 6.5 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation

文件：52.46 Kbytes 页数：8 Pages

NEC

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