NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1805 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

文件：150.89 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • Complementary to 2SA1805 • Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS • Power amplifier applications

文件：85.75 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • Complementary to 2SA1805 • Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS • Power amplifier applications

文件：204.41 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ lc= 7A • Complement to Type 2SA1805 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage app

文件：128.35 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • Complementary to 2SA1805 • Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS • Power amplifier applications

文件：157.93 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN epitaxial planer type(For high speed switching)

Silicon NPN epitaxial planar type For high-speed switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

文件：42.22 Kbytes 页数：2 Pages

PANASONIC

松下

For High-Speed Switching

Silicon NPN epitaxial planar type For high-speed switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

文件：74.64 Kbytes 页数：3 Pages

PANASONIC

松下

SILICON NPN TRIPLE DIFFUSED DIFFUSED

Application EDTV / HDTV horizontal deflection output Features 1. High Speed Switching 0.5us Max 2. High breakdown voltage Vceo = 1500V 3. Isolated package, TO-3PFM

文件：44.06 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 5.0V(Max) @IC=10A APPLICATIONS ·EDTV/HDTV Horizontal Ddflection output

文件：351.14 Kbytes 页数：2 Pages

ISC

无锡固电

Power Bipolar Transistors

文件：55.8 Kbytes 页数：2 Pages

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