SILICON NPN TRIPLE DIFFUSED DIFFUSED

Application EDTV / HDTV horizontal deflection output Features 1. High Speed Switching 0.5us Max 2. High breakdown voltage Vceo = 1500V 3. Isolated package, TO-3PFM

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HITACHIHitachi Semiconductor

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Power Bipolar Transistors

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isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 5.0V(Max) @IC=10A APPLICATIONS ·EDTV/HDTV Horizontal Ddflection output

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Silicon NPN Triple Diffused

ApplicationEDTV / HDTV horizontal deflection output\nFeatures1. High Speed Switching 0.5us Max2. High breakdown voltage Vceo = 1500V3. Isolated package, TO-3PFM

HITACHI

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