MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, Power Mini Mold (SOT-89).

文件：66.34 Kbytes 页数：8 Pages

NEC

瑞萨

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (

文件：163.77 Kbytes 页数：7 Pages

CEL

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power minimold (SOT-89).

文件：181.66 Kbytes 页数：9 Pages

RENESAS

瑞萨

isc Silicon NPN RF Transistor

DESCRIPTION • Low Distortion at Low Supply Voltage. IM2- 55 dB TYP., IM3- 76 dB TYP. @VCE = 5 V, IC = 50 mA, VO = 105dBμ /75Ω • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low distortion ,

文件：269.54 Kbytes 页数：2 Pages

ISC

无锡固电

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power minimold (SOT-89).

文件：181.66 Kbytes 页数：9 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (

文件：163.77 Kbytes 页数：7 Pages

CEL

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

文件：181.66 Kbytes 页数：9 Pages

RENESAS

瑞萨

RF & Microwave device

文件：137.58 Kbytes 页数：2 Pages

RENESAS

瑞萨

Package：TO-243AA；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 6GHZ SOT89

CEL

Package：TO-243AA；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 6GHZ SOT89

CEL