Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage,high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output applications

文件：169.29 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage,high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output applications

文件：153.36 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage,high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output applications

文件：289.12 Kbytes 页数：4 Pages

SAVANTIC

2SC4532

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Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High speed switching • High VCBO • Wide area of safe operation APPLICATIONS • For high breakdown voltate, high-speed switching applications

文件：185.26 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High speed switching • High VCBO • Wide area of safe operation APPLICATIONS • For high breakdown voltage, high-speed switching applications

文件：134.49 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High speed switching • High VCBO • Wide area of safe operation APPLICATIONS • For high breakdown voltate ,high-speed switching applications

文件：157.26 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be

文件：59.62 Kbytes 页数：3 Pages

PANASONIC

松下

丝印：QR；Package：SOT-89；MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES

文件：60.08 Kbytes 页数：8 Pages

NEC

瑞萨

NPN MEDIUM POWER MICROWAVE TRANSISTOR

DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers e

文件：640.16 Kbytes 页数：10 Pages

CEL