Ratigns and Caracteristics of Fuji Power Transistor

Ratigns and Caracteristics of Fuji Power Transistor

文件：615.94 Kbytes 页数：13 Pages

FUJI

富士通

isc Silicon NPN Power Transistor

iscSilicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO = 800V(Min.) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power ampl

文件：251.19 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage-: V(BR)CEO = 800V(Min.) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

文件：129.75 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) • High speed switching time: tstg = 0.3 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1743

文件：176.91 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

文件：290.76 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：153.36 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件：153.36 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistor

文件：127.84 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件：136.13 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：185.26 Kbytes 页数：4 Pages

JMNIC

锦美电子