TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：124.74 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High breakdown voltage, adoption of MBIT process excellent hFE linearity. Applications High voltage driver applications.

文件：960.43 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：55.22 Kbytes 页数：1 Pages

TEL

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：299.53 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：280.4 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Satisfactory linearity of foward current transfer ratio hFE • Wide area of safe operation (ASO) • High-speed switching • High collector to base voltage VCBO APPLICATIONS • For high breakdown voltage high-speed switching

文件：162.08 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Satisfactory linearity of foward current transfer ratio hFE • Wide area of safe operation (ASO) • High-speed switching • High collector to base voltage VCBO APPLICATIONS • For high breakdown voltage high-speed switching

文件：107.82 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be

文件：59.08 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Satisfactory linearity of foward current transfer ratio hFE • Wide area of safe operation (ASO) • High-speed switching • High collector to base voltage VCBO APPLICATIONS • For high breakdown voltage high-speed switching

文件：132.74 Kbytes 页数：3 Pages

ISC

无锡固电

Driver Applications?

Driver Applications Features · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 50±8V between collector and base. · Uniformity in collector-to-base breakdown voltage due to accurate impurity diffusion process. · Large inductive load handl

文件：87.18 Kbytes 页数：3 Pages

SANYO

三洋