NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURES\n• Low-voltage, low-current, low-noise and high-gain\n  NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n  GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n• Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc.\n• Gold electrode gives high reliabilit • Low-voltage, low-current, low-noise and high-gain\n  NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n  GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n• Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc.\n• Gold electrode gives high reliability.\n• Mini;

Renesas

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

Renesas

瑞萨

For amplify high frequency and low noise.

NEC

瑞萨

Package：SC-71；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 120V 0.8A MSTM

Toshiba Semiconductor and Storage

Package：SC-71；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 120V 0.8A MSTM

Toshiba Semiconductor and Storage

Package：SC-71；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 120V 0.8A MSTM

Toshiba Semiconductor and Storage