For amplify high frequency and low noise.

NEC

瑞萨

NPN Epitaxial Silicon Transistor

Features ● Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz ● Ideal for battery drive of pagers, compact radio equipment cordless phones, etc. ● Gold electrode gives high relia

文件：37.36 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURES • Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz • Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc. • Gold electrode gives high reliabil

文件：110.24 Kbytes 页数：8 Pages

NEC

瑞萨

SOT23

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TO-126

SANYO

三洋

上传：深圳市昌和盛利电子有限公司