NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

HIGH CURRENT SWITCHING APPLICATIONS ​​​​​​​ • Low Collector Saturation Voltage: VCE (sat)= 0.4V (Max.) • High-Speed Switching Time: tstg= 1.0μs (Typ.) • Complementary to 2SA1451A

文件：213.99 Kbytes 页数：4 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPLICATIONS ·Designed for high current switching applications

文件：252.72 Kbytes 页数：2 Pages

ISC

无锡固电

NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

Toshiba

东芝

HIGH CURRENT SWITCHING APPLICATIONS

High-Current Switching Applications ​​​​​​​ • Low collector saturation voltage: VCE (sat)= 0.4 V (max) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1451A

文件：225.46 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Current Switching Applications

文件：148.16 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Current Switching Applications

文件：153 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Current Switching Applications

文件：148.16 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Current Switching Applications

文件：153 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Polarity：NPN\nComplementary Product：2SA1451A\nRoHS Compatible Product(s) (#)：Available Collector Current IC 12 A \nCollector-emitter voltage VCEO 50 V ;

Toshiba

东芝