NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURES\n• Low-voltage, low-current, low-noise and high-gain\n  NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n  GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n• Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc.\n• Gold electrode gives high reliabilit • Low-voltage, low-current, low-noise and high-gain\n  NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n  GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz\n• Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc.\n• Gold electrode gives high reliability.\n• Mini;

Renesas

瑞萨

SOT23

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TO-126

SANYO

三洋

上传：深圳市昌和盛利电子有限公司

TO-3PL

SANYO

三洋

上传：深圳市昌和盛利电子有限公司

TO-3PL

MAT/SAY

上传：标准国际(香港)有限公司