MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

DESCRIPTION\nThe NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.  The NE68033 / 2SC3585 features excellent power gain with very low-noise figures.  The NE68033 / 2SC3585 employs direct nitride passivated ba • NF 1.8 dB TYP. @f = 2.0 GHz\n• Ga 9 dB TYP. @f = 2.0 GHz;

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：103.63 Kbytes 页数：8 Pages

NEC

瑞萨

Package：TO-236-3，SC-59，SOT-23-3；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 10GHZ SOT23

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

DESCRIPTION The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2SC3585 employs direct nitride passivated base surface process (DNP proc

文件：321.52 Kbytes 页数：10 Pages

RENESAS

瑞萨

Low Noise and High Gain

文件：308.73 Kbytes 页数：6 Pages

ISC

无锡固电

NPN Silicon Epitaxial Transistor

Features NF 1.8dB TYP. @f = 2.0 GHz Ga 9dB TYP.@f=2.0GHz

文件：38.03 Kbytes 页数：1 Pages

KEXIN

科信电子