TRANSISTOR SILICON NPN DIFFUSED TYPE (PCT PROCESS)

Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 μs (max) tf = 1.5 μs (max), (IC = 0.5 A) • High breakdown voltage: VCEO = 400 V

文件：220.64 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO = 400 V(Min) ·Complement to the PNP 2SA1924 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.

文件：324.01 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial Planar Type

Features • Low Noise Figure • NF=1.5dB,|S21e|2=16dB(f=500MHz) • NF=1.5dB,|S21e|2=10.5dB(f=1GHz)

文件：35.66 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN Epitaxial

Features ● High transition frequency: fT = 400 MHz (typ). ● Low saturation voltage: VCE (sat) = 0.3 V (max). ● High speed switching time: tstg = 15 ns (typ).

文件：41.27 Kbytes 页数：2 Pages

KEXIN

科信电子

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Transition Frequency ● Low Saturation Voltage

文件：722.28 Kbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

FEATURES ● High Transition Frequency ● Low Saturation Voltage

文件：433.36 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)

Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.)

文件：160.63 Kbytes 页数：4 Pages

TOSHIBA

东芝

FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3438 is a silicon NPN epitaxial type small signal transistor designed for power supply, 20 to 40W output low frequency power amplifier drive applications. Complementary with 2SA1368.

文件：146.87 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

SMALL-SIGNAL TRANSISTOR FOR SMALL TYPE MOTOR PLUGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3439 is a silicon NPN epitaxial type transistor designed with high collector dissipation, high collector current, high hFE. Complementary with 2SA1369. FEATURES ● High hFE=400 to 1800. ● High collector current (Icm=3A,Ic=1.5A) ● Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA)

文件：147.77 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

Small Signal Transistor

Features ● High hFE=400 to 1800. ● High collector current (Icm=3A,Ic=1.5A) ● High collector dissipation Pc=500mW ● Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA) ● Small package for mounting.

文件：52.7 Kbytes 页数：1 Pages

KEXIN

科信电子