Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 0.3A TO236

Toshiba Semiconductor and Storage

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

For Muting and Switching Applications  AEC-Q101 Qualified (Note1).  High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package

文件：583.63 Kbytes 页数：5 Pages

TOSHIBA

东芝

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

文件：228.04 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN transistor in a SOT-23 Plastic Package

文件：895.19 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

文件：512 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

文件：177.97 Kbytes 页数：4 Pages

TOSHIBA

东芝