首页 >2SC2570>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

2SC2570

Electrical characterlitics

General Purpose Diodes

文件:127.97 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC2570

General Purpose Diodes

General Purpose Diodes

文件:127.97 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC2570A

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA • Wide dynamic range :

文件:119.68 Kbytes 页数:8 Pages

NEC

瑞萨

2SC2570A

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA • Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA APPLICATIONS • Designed for use in low-noise amplifier of VHF ~ UHF stages.

文件:248.53 Kbytes 页数:5 Pages

ISC

无锡固电

2SC2570A-T

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA • Wide dynamic range :

文件:119.68 Kbytes 页数:8 Pages

NEC

瑞萨

2SC2570A

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

文件:293.26 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SC2570A

NPN SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER\nNPN SILICON EPITAXIAL TRANSISTORDESCRIPTION\nThe 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.FEATURES\n• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA\n• Wide dynamic range : NF = 1.9 d • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA\n• Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA;

Renesas

瑞萨

晶体管资料

  • 型号:

    2SC2570

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    超高频/特高频 (UHF)

  • 封装形式:

    直插封装

  • 极限工作电压:

    25V

  • 最大电流允许值:

    0.07A

  • 最大工作频率:

    5GHZ

  • 引脚数:

    3

  • 可代换的型号:

    2G913C,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    A-21

  • vtest:

    25

  • htest:

    5000000000

  • atest:

    0.07

  • wtest:

    0

详细参数

  • 型号:

    2SC2570

  • 制造商:

    Panasonic Industrial Company

  • 功能描述:

    DISCD TRANSISTOR SUBBING WITH 2SC2570A

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
2020+
明嘉莱只做原装正品现货
2510000
T0-92
询价
RENESAS/瑞萨
25+
T0-92
80000
原装全新进口假一赔十
询价
24+
TO-3
10000
询价
NEC
24+
原厂封装
3000
原装现货假一罚十
询价
HGF/恒光发
23+
TO-92
50000
全新原装正品现货,支持订货
询价
NEC
08+
TO-92
2250
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
国产
2023+
原厂封装
50000
原装现货
询价
NEC
2023+
TO-92
8800
正品渠道现货 终端可提供BOM表配单。
询价
NEC
23+
TO-92
214
全新原装正品现货,支持订货
询价
NEC
2014+
TO-92
1319
全新 发货1-2天
询价
更多2SC2570供应商 更新时间2026-4-18 17:02:00