| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2SC2570 | Electrical characterlitics General Purpose Diodes 文件:127.97 Kbytes 页数:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
2SC2570 | General Purpose Diodes General Purpose Diodes 文件:127.97 Kbytes 页数:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA • Wide dynamic range : 文件:119.68 Kbytes 页数:8 Pages | NEC 瑞萨 | NEC | ||
isc Silicon NPN RF Transistor DESCRIPTION • Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA • Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA APPLICATIONS • Designed for use in low-noise amplifier of VHF ~ UHF stages. 文件:248.53 Kbytes 页数:5 Pages | ISC 无锡固电 | ISC | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA • Wide dynamic range : 文件:119.68 Kbytes 页数:8 Pages | NEC 瑞萨 | NEC | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 文件:293.26 Kbytes 页数:10 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER\nNPN SILICON EPITAXIAL TRANSISTORDESCRIPTION\nThe 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.FEATURES\n• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA\n• Wide dynamic range : NF = 1.9 d • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA\n• Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA; | Renesas 瑞萨 | Renesas |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
超高频/特高频 (UHF)
- 封装形式:
直插封装
- 极限工作电压:
25V
- 最大电流允许值:
0.07A
- 最大工作频率:
5GHZ
- 引脚数:
3
- 可代换的型号:
2G913C,
- 最大耗散功率:
- 放大倍数:
- 图片代号:
A-21
- vtest:
25
- htest:
5000000000
- atest:
0.07
- wtest:
0
详细参数
- 型号:
2SC2570
- 制造商:
Panasonic Industrial Company
- 功能描述:
DISCD TRANSISTOR SUBBING WITH 2SC2570A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2020+ |
明嘉莱只做原装正品现货 |
2510000 |
T0-92 |
询价 | ||
RENESAS/瑞萨 |
25+ |
T0-92 |
80000 |
原装全新进口假一赔十 |
询价 | ||
24+ |
TO-3 |
10000 |
询价 | ||||
NEC |
24+ |
原厂封装 |
3000 |
原装现货假一罚十 |
询价 | ||
HGF/恒光发 |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
08+ |
TO-92 |
2250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
国产 |
2023+ |
原厂封装 |
50000 |
原装现货 |
询价 | ||
NEC |
2023+ |
TO-92 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
NEC |
23+ |
TO-92 |
214 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
2014+ |
TO-92 |
1319 |
全新 发货1-2天 |
询价 |
相关规格书
更多- 2SC2571
- 2SC2572
- 2SC2575L
- 2SC2578
- 2SC258
- 2SC2581
- 2SC2584
- 2SC2586
- 2SC2588(A)
- 2SC259
- 2SC2591
- 2SC2593
- 2SC2595
- 2SC2597
- 2SC2599
- 2SC260
- 2SC2601
- 2SC2603
- 2SC2605
- 2SC2607
- 2SC2609
- 2SC2610
- 2SC2612
- 2SC2613K
- 2SC2615
- 2SC2617
- 2SC2619
- 2SC2620
- 2SC2623
- 2SC2625
- 2SC2627
- 2SC2629
- 2SC2630
- 2SC2632
- 2SC2634
- 2SC2636
- 2SC2638
- 2SC264
- 2SC2641
- 2SC2643
- 2SC2645
- 2SC2647
- 2SC2649
- 2SC2650
- 2SC2652
相关库存
更多- 2SC2571(-1,-2)
- 2SC2575
- 2SC2577
- 2SC2579
- 2SC2580
- 2SC2582
- 2SC2585
- 2SC2587(A)
- 2SC2589
- 2SC2590
- 2SC2592
- 2SC2594
- 2SC2596
- 2SC2598
- 2SC26
- 2SC2600
- 2SC2602
- 2SC2604
- 2SC2606
- 2SC2608
- 2SC261
- 2SC2611
- 2SC2613
- 2SC2614
- 2SC2616
- 2SC2618
- 2SC262
- 2SC2621
- 2SC2624
- 2SC2626
- 2SC2628
- 2SC263
- 2SC2631
- 2SC2633
- 2SC2635
- 2SC2637
- 2SC2639
- 2SC2640
- 2SC2642
- 2SC2644
- 2SC2646
- 2SC2648
- 2SC265
- 2SC2651
- 2SC2653

