| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS) VHF BAND POWER AMPLIFIER APPLICATION Output Power : Po = 28W (Min.) (f =175MHz , VCC = 12.5V, Pi = 4W) 文件:117.31 Kbytes 页数:2 Pages | TOSHIBA 东芝 | TOSHIBA | ||
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) VHF BAND POWER AMPLIFIER APPLICATIONS ● Output Power : Po=6W (Min.) (f=470MHz, VCC=12.6V, Pi=1W) 文件:119.13 Kbytes 页数:2 Pages | TOSHIBA 东芝 | TOSHIBA | ||
UHF BAND AMPLIFIER APPLICATIONS UHF BAND AMPLIFIER APPLICATIONS ● Output Power : Po=12W (Min.) (f=470MHz, VCC=12.6V, Pi=3W) 文件:153.38 Kbytes 页数:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) UHF BAND AMPLIFIER APPLICATIONS ● Output Power : Po=12W (Min.) (f=470MHz, VCC=12.6V, Pi=3W) 文件:118.49 Kbytes 页数:2 Pages | TOSHIBA 东芝 | TOSHIBA | ||
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) (VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po= 25W(Min.) (f=470MHz, VCC = 12.6 V , Pi= 8W) 文件:119.31 Kbytes 页数:2 Pages | TOSHIBA 东芝 | TOSHIBA | ||
TRANSISTOR (VHF~UHF BAND WIDEBAND AMPLIFIER APPLICATIONS) VHF~UHF Band Wideband Amplifier Applications • High gain • Low IMD • fT = 4 GHz (typ.) 文件:205.95 Kbytes 页数:3 Pages | TOSHIBA 东芝 | TOSHIBA | ||
Silicon NPN epitaxial planer type(For high-frequency amplification) For high-frequency amplification ■ Features ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 文件:57.13 Kbytes 页数:3 Pages | PANASONIC 松下 | PANASONIC | ||
Trans GP BJT NPN 17V 2.8A 4-Pin 2-7A1A | NJS | NJS | ||
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) | Toshiba 东芝 | Toshiba | ||
Trans RF BJT NPN 12V 0.12A 3-Pin TO-92 | NJS | NJS |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
超高频/特高频 (UHF)_功率放大 (L)
- 封装形式:
贴片封装
- 极限工作电压:
35V
- 最大电流允许值:
2.8A
- 最大工作频率:
470MHZ
- 引脚数:
4
- 可代换的型号:
3DA23B,
- 最大耗散功率:
12W
- 放大倍数:
- 图片代号:
G-253
- vtest:
35
- htest:
470000000
- atest:
2.8
- wtest:
12.0001
技术参数
- Output Power:
12(Min)W
- Number of Elements per Chip:
1
- Minimum DC Current Gain:
10@1.5A@5V
- Maximum Operating Temperature:
175°C
- Maximum Emitter Base Voltage:
3.5V
- Maximum DC Collector Current:
2.8A
- Maximum Collector Emitter Voltage:
17V
- Maximum Collector Base Voltage:
35V
- Material:
Si
- Configuration:
Single Dual Emitter
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
询价 | ||
MITSUBISHI |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
TOSHIBA |
23+ |
TO-58 |
655 |
专营高频管模块,全新原装! |
询价 | ||
MITSUBISHI |
24+ |
12 |
询价 | ||||
TOS |
24+ |
SOP3-20 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
TOSHIBA |
24+ |
SOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
TOSHIBA |
25+ |
2789 |
全新原装自家现货!价格优势 |
询价 | |||
TOSHIBA/东芝 |
24+ |
394 |
现货供应 |
询价 | |||
TOS |
24+ |
SOP3-20 |
6540 |
原装现货/欢迎来电咨询 |
询价 | ||
MITSUBISHI/三菱 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 |
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