Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Fast Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications. • High speed DC-DC converter applications.

文件：128.669 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON HIGH SPEED POWER TRANSISTOR

SILICON NPN RING EMITTER TRANSISTOR (RET)

文件：194.31 Kbytes 页数：1 Pages

FUJITSU

富士通

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SA1077 • Fast switching speed • Excellent safe operating area APPLICATIONS • High frequency power amplifiers • Audio power amplifiers • Switching regulators • DC-DC converters

文件：99.83 Kbytes 页数：3 Pages

SAVANTIC

SILICON HIGH SPEED POWER TRANSISTOR

SILICON NPN RING EMITTER TRANSISTOR (RET) ● High fT = 160 MHz (typ) ● Excellent Safe Operating Area ● Improved reverse Second-Breakdown Capability ● Excellent Current Gain Linearity

文件：179.76 Kbytes 页数：1 Pages

FUJITSU

富士通

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 0.7A • Complement to Type 2SA1078 APPLICATIONS • High frequency power amplifier, Audio power amplifier Dirvers

文件：188.71 Kbytes 页数：2 Pages

ISC

无锡固电

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (28V SUPPLY VOLTAGE USE)

FEATURES: Specified 28V, 28MHz Characteristics : Output Power: Po 150WPEP Minimum Gain : Gpe=12.2dB e-35 (Min.) : Efficiency : Intermodulation Distortion: IMD=-30dB (Max.)

文件：141.59 Kbytes 页数：2 Pages

TOSHIBA

东芝

TRANSISTOR (AUDIO FREQUENCY AMPLIFIER, DRIVER STAGE FOR LED LAMP, TEMPERATURE COMPENSATION APPLICATIONS)

Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications • High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

文件：132.52 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0μs(Max.) : tf=1.0μs(Max. APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC

文件：183.27 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.) APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC

文件：151.82 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC

文件：150.04 Kbytes 页数：4 Pages

SAVANTIC