Silicon NPN Epitaxial

2SC2545, 2SC2546, 2SC2547 Low frequency low noise amplifier Complementary pair with 2SA1083, 2SA1084 and 2SA1085

文件：41.6 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

2SC2545, 2SC2546, 2SC2547 Low frequency low noise amplifier Complementary pair with 2SA1083, 2SA1084 and 2SA1085

文件：41.6 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

2SC2545, 2SC2546, 2SC2547 Low frequency low noise amplifier Complementary pair with 2SA1083, 2SA1084 and 2SA1085

文件：41.6 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

NPN Plastic Encapsulated Transistor

FEATURES • High Voltage • Low Saturation Voltage • Small Collector Output Capacitance • Complementary to 2SA1091

文件：772.58 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：C2551；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091

文件：1.34253 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (HIGHT VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.) • Complement

文件：220.91 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC= 20mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：315.83 Kbytes 页数：3 Pages

ISC

无锡固电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High voltage ● Low saturation voltage ● Small collector output capacitance ● Complementary to 2SA1091

文件：425.3 Kbytes 页数：3 Pages

JIANGSU

长电科技

丝印：C2551；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091

文件：1.34253 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High collector breakdown voltage : VCEO=400V(Min) • Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=0.8A APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

文件：150.72 Kbytes 页数：4 Pages

SAVANTIC