SILICON HIGH SPEED POWER TRANSISTOR

SILICON NPN RING EMITTER TRANSISTOR (RET) ● High fT = 160 MHz (typ) ● Excellent Safe Operating Area ● Improved reverse Second-Breakdown Capability ● Excellent Current Gain Linearity

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Fujitsu

富士通

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 0.7A • Complement to Type 2SA1078 APPLICATIONS • High frequency power amplifier, Audio power amplifier Dirvers

文件：188.71 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON HIGH SPEED POWER TRANSISTOR

Fujitsu

富士通

T0-92

RENESAS/瑞萨

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TO-3P

Fuji

富士通

上传：深圳市亚泰盈科电子有限公司