TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

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DCCOM

道全

isc Silicon NPN Transistor

DESCRIPTION • High Voltage and High Current Vceo=50V(Min.), Ic=150mA(Max) • Excellent hFE Linearity • Low Noise • Complement to Type 2SA1015(O,Y,GR class) APPLICATIONS • Audio frequency general purpose amplifier Applications • Driver stage amplifier applications.

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ISC

无锡固电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

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JIANGSU

长电科技

NPN Transistor

Features ● Power dissipation

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KEXIN

科信电子

NPN SILICON TRANSISTOR

文件：168.25 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

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SECOS

喜可士

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

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TGS

丝印：HF；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency g

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LUGUANG

鲁光电子

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

文件：1.94881 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

文件：243.05 Kbytes 页数：2 Pages

KOOCHIN

灏展电子