丝印：C1815；Package：TO-92；Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

文件：602.02 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：279.37 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：256.029 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN Transistor

Features ● Power dissipation

文件：142.23 Kbytes 页数：2 Pages

KEXIN

科信电子

NPN SILICON TRANSISTOR

文件：168.25 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

文件：188.02 Kbytes 页数：2 Pages

SECOS

喜可士

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

文件：49.3 Kbytes 页数：3 Pages

TGS

丝印：HF；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency g

文件：1.07537 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

文件：1.94881 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

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TRANSISTOR (NPN) FEATURES Power dissipation

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KOOCHIN

灏展电子