丝印：C1815；Package：TO-92；Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：212.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

文件：602.02 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：279.37 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：256.029 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；Audio Frequency General Purpose Amplifier Applications

文件：279.37 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications

文件：142.85 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：HF；Package：SOT-23；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

文件：637.69 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

NPN SILICON TRANSISTOR

文件：168.25 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

NPN Plastic Encapsulated Transistor

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

文件：180.08 Kbytes 页数：2 Pages

SECOS

喜可士

Power dissipation

TRANSISTOR (NPN) FEATURES ● Power dissipation

文件：1.69813 Mbytes 页数：2 Pages

DGNJDZ

南晶电子