丝印：L4/L5/L6/L7；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ● High Voltage:VCEO=50V. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor. ● Audio frequency general purpose amplifier.

文件：1.0753 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

文件：1.46926 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：136.53 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

High DC current gain hFE 200(Typ)VCE 6V, IC 1mA

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

文件：107.26 Kbytes 页数：2 Pages

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半导体美科半导体股份（香港）有限公司

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812. Applications Audio frequency general amplifier application.

文件：1.545 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：L4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

文件：2.34324 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

文件：577.82 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

文件：190.94 Kbytes 页数：2 Pages

HOTTECH

合科泰

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V

文件：2.39104 Mbytes 页数：4 Pages

HDSEMI

海德半导体

丝印：L4；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES * High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA * High voltage:VCEO=50V

文件：557.06 Kbytes 页数：3 Pages

UMW

友台半导体