PNP SILICON EPITAXIAL TRANSISTOR MP-3?

DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP.

文件：233.15 Kbytes 页数：4 Pages

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR MP-3?

DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP.

文件：233.15 Kbytes 页数：4 Pages

NEC

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isc Silicon PNP Power Transistor

DESCRIPTION • Low VCE(sat)=-0.3V TYP • PNP silicon epitaxial transistor • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • The 2SB962-Z is designed for Audio frequency amplifier and switching ,especially in hybrid integr

文件：289.25 Kbytes 页数：2 Pages

ISC

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SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP.

文件：821.31 Kbytes 页数：6 Pages

RENESAS

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PNP Silicon Epitaxial Transistor

■ Features ● Low collector to emitter saturation voltage VCE(sat).

文件：40.03 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3?

DESCRIPTION 2SB963-Z is designed for switching, especially in Hybrid integrated Circuits FEATURES ● High Gain hFE = 2000 to 3000 ● Complement to 2SD1286-Z

文件：219 Kbytes 页数：4 Pages

NEC

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SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid FEATURES • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z

文件：739.18 Kbytes 页数：6 Pages

RENESAS

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丝印：DPAK；Package：TO-252；isc Silicon PNP Darlington Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Very high DC current gain • Monolithic darlington transistor with integrated antiparallel collector-emitter diode • Complement to type 2SD1286-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

文件：303.17 Kbytes 页数：2 Pages

ISC

无锡固电

PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3?

DESCRIPTION 2SB963-Z is designed for switching, especially in Hybrid integrated Circuits FEATURES ● High Gain hFE = 2000 to 3000 ● Complement to 2SD1286-Z

文件：219 Kbytes 页数：4 Pages

NEC

瑞萨

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications

文件：116.49 Kbytes 页数：3 Pages

ISC

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