| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 文件：133.09 Kbytes 页数：1 Pages | WINNERJOIN 永而佳 | WINNERJOIN | ||
PNP Plastic Encapsulated Transistor FEATURE ● Power dissipation PCM: 0.9 W (Tamb=25℃ ) ● Collector current ICM: -1 A ● Collector-base voltage V(BR)CBO: -60 V ● Operating and storage junction temperature range TJ, TSTG: -55℃ to +150℃ 文件：589.04 Kbytes 页数：3 Pages | SECOS 喜可士 | SECOS | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Complement to type 2SD864 APPLICATIONS ·For medium speed and power switching Applications 文件：111.5 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | ||
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K 文件：368.42 Kbytes 页数：2 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD864 APPLICATIONS ·Medium speed an 文件：247.62 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K 文件：368.42 Kbytes 页数：2 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Complement to type 2SD864K APPLICATIONS ·For medium speed and power switching Applications 文件：111.89 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | ||
PNP Silicon Medium Power Transistor FEATURES Power dissipation PCM : 500mW˄Tamb=25ć˅ Collector current ICM :-1 A Collector-base voltage VB(BR)CBO: -30 V Operating and storage junction temperature range TJˈTstg: -55ćto +150ć 文件：95.03 Kbytes 页数：2 Pages | SECOS 喜可士 | SECOS | ||
Silicon PNP epitaxial planer type(For low-frequency output amplification) Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A ■Features ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the 文件：39.5 Kbytes 页数：2 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon PNP Epitaxial Planar Type Features Large collector power dissipation PC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 文件：52.56 Kbytes 页数：2 Pages | KEXIN 科信电子 | KEXIN |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
120V
- 最大电流允许值：
3A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD652,BDT20,BDW54D,BDW64D,FC50C,
- 最大耗散功率：
30W
- 放大倍数：
β>1000
- 图片代号：
B-10
- vtest：
120
- htest：
999900
- atest：
3
- wtest：
30
详细参数
- 型号：
2SB76
- 制造商：
SAVANTIC
- 制造商全称：
Savantic, Inc.
- 功能描述：
Silicon PNP Power Transistors
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
TO 220 |
158404 |
明嘉莱只做原装正品现货 |
询价 | ||
24+ |
TO-220 |
10000 |
全新 |
询价 | |||
日立 |
24+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
HITACHI/日立 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 | ||
TOSHIBA/东芝 |
23+ |
TO-220 |
67300 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
HITACHI |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
PANASONIC |
1415+ |
SOT89 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
panasonic |
13+ |
NA |
19258 |
原装分销 |
询价 | ||
PANASONIC |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
询价 |
