Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2250 ■ Features • Optimum for 80 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

文件：71.09 Kbytes 页数：3 Pages

Panasonic

松下

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -6A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@lc= -6A • Complement to Type 2SD2250 APPLICATIONS • Designed for power amplifier applications • Optimum for SOW HiFi output applications.

文件：249.27 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -6A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@lc= -6A • Complement to Type 2SD2250 APPLICATIONS • Designed for power amplifier applications • Optimum for SOW HiFi output applications.

文件：79.84 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2250 • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For power amplification • Optimum for HiFi output applications

文件：114.76 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2254 ■ Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：71.09 Kbytes 页数：3 Pages

Panasonic

松下

isc Silicon PNP Darlington Power Transistor 2SB1492

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -5A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A • Complement to Type 2SD2254 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed f

文件：269.27 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -5A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A • Complement to Type 2SD2254 APPLICATIONS • Designed for power amplifier applications. • Optimum for 60W HiFi output applications.

文件：78.73 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

For power amplification Complementary to 2SD2255

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2255 ■ Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：68.94 Kbytes 页数：3 Pages

Panasonic

松下

Silicon PNP Triple Diffused

Application Low frequency power amplifier complementary Pair with 2SD2256

文件：35.65 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

TRANSISTOR (HIGH POWER SWITCHING APPLICATIONS)

High-Power Switching Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257

文件：158.11 Kbytes 页数：3 Pages

TOSHIBA

东芝