2SB1412

LowFrequencyTransistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

2SB1412

PNPEPITAXIALPLANARTRANSISTOR

Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat)

2SB1412

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

2SB1412

LowFrequencyTransistor

Features ●LowVCE(sat). ●PNPsilicontransistor.

2SB1412

PNPSiliconLowFrequencyTransistor

Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118

2SB1412

Lowfrequencytransistor(−20V,−5A)

2SB1412

Lowfrequencytransistor(−20V,−5A)

2SB1412

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES PowerAmplifierApplications

2SB1412

iscSiliconNPNPowerTransistor

DESCRIPTION •Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifie

2SB1412

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications.

2SB1412

HIGHVOLTAGESWITCHINGTRANSISTOR

2SB1412-P

PNPSiliconEpitaxialTransistors

2SB1412-Q

PNPSiliconEpitaxialTransistors

2SB1412-R

PNPSiliconEpitaxialTransistors

2SB1412TLR

Lowfrequencytransistor(??0V,??A)