2SB1481

SiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)cEo=-100V(Min) •HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,lc=-1.5A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-3A,IB=-6mA) •ComplementtoType2SD2241 APPLICATIONS •Highpowerswitching

2SB1481

SiliconPNPPowerTransistors

2SB1481

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) ·HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,IC=-1.5A) ·LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(IC=-3A,IB=-6mA)B ·ComplementtoType2SD2241 APPLICATIONS ·H

2SB1481

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SD2241 ·HighDCcurrentgain. ·Lowsaturationvoltage. ·DARLINGTON APPLICATIONS ·Forpoweramplifierapplications

2SB1481

SiliconPNPEpitaxialType

2SB1481

TRANSISTOR(SWITCHINGAPPLICATIONS)

SwitchingApplications •HighDCcurrentgain:hFE=2000(min)(VCE=−2V,IC=−1.5A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−3A) •Complementaryto2SD2241