isc Silicon PNP Power Transistor

DESCRIPTION ·Low saturation voltage. ·High reliability ·High breakdown voltage APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications

文件：266.21 Kbytes 页数：2 Pages

ISC

无锡固电

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Wide ASO (Adoption of MBIT Process). ● Low Saturation Voltage. ● High Reliability. ● High Breakdown Voltage.

文件：1.69248 Mbytes 页数：3 Pages

JIANGSU

长电科技

Silicon PNP Power Transistor

DESCRIPTION • High Reliability • Low Collector Saturation Voltage :VCE(sat)=-1.0V(Max)@Ic=-2A • Wide Area of Safe Operation APPLICATIONS • Designed for low frequency power amplifier applications.

文件：130.65 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

文件：253.86 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP transistor in a TO-220F Plastic Package

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features High VCEO, low saturation voltage, wide ASO. Applications Low frequency power amplifier applications.

文件：977.43 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：TL；Package：CPT3；Power Transistor (-160V , -1.5A)

Features 1) High breakdown voltage.(BVCEO= -160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.

文件：84.04 Kbytes 页数：4 Pages

ROHM

罗姆

POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：48.13 Kbytes 页数：1 Pages

ROHM

罗姆

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

文件：124.57 Kbytes 页数：4 Pages

ROHM

罗姆

MEDIUM POWER TRANSISTOR(-32V, -2A)

文件：538.33 Kbytes 页数：11 Pages

ROHM

罗姆

Medium power Transistor(
32V,
2A)

Features 1) Low VCE(sat). VCE(sat) =
0.5V (Typ.) (IC / IB =
2A /
0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

文件：134.9 Kbytes 页数：4 Pages

ROHM

罗姆