2SA812

PNPSiliconEpitaxialTransistor

Features ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V

2SA812

PNPPlastic-EncapsulateTransistors

2SA812

SiliconEpitaxialPlanarTransistor

FEATURES •Commplementaryto2SC1623. •HighDCcurrentgain:hFE=200typ.(VCE=-6.0V,IC=-1.0mA) •HighVoltage:VCEO=-50V. APPLICATIONS •Audiofrequency,generalpurposeamplifier.

2SA812

SiliconEpitaxialPlanarTransistor

FEATURES ●Commplementaryto2SC1623. ●HighDCcurrentgain:hFE=200typ.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V. APPLICATIONS ●Audiofrequency,generalpurposeamplifier.

2SA812

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.2W(Tamb=25℃) CollectorcurrentICM:-0.1A Collector-basevoltageV(BR)CBO:-60V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2SA812

AUDIOFREQUENCY,GENERALPURPOSEAMPLIFIERPNPSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA)) •HighVoltage:VCEO=−50V

2SA812

Plastic-EncapsulateTransistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

2SA812A

SILICONTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •Complementaryto2SC1623A •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA) •HighVoltage:VCEO=−50V ABSOLUTEMAXIMUMRATINGS(TA=25°C) CollectortoBaseVoltageVCBO−60V CollectortoEmitterVoltageVCEO−50

2SA812K

PNPEpitaxialPlanarTransistor

FEATURES •Complementaryto2SC1623K •HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) •HighVoltage:VCEO=-50V

2SA812Q

GeneralPurposeTransistors

FEATURE ●HighVoltage:VCEO=-50V. ●Epitaxialplanartype. ●NPNcomplement:2SC1623 ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101Qualified