Power Amplifier Applications

• High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

文件：187.3 Kbytes 页数：3 Pages

SYC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

文件：201.99 Kbytes 页数：4 Pages

JMNIC

锦美电子

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)=- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications

文件：157.75 Kbytes 页数：3 Pages

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power Amplifier Applications4

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

文件：163.38 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

文件：163.38 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

文件：163.38 Kbytes 页数：4 Pages

TOSHIBA

东芝

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

文件：147.68 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon PNP triple diffusion planar transistor

Silicon PNP triple diffusion planar transistor -10A/-140V/100W FEATURES High breakdown voltage, VCEO = -140V (min) Complementary to 2SC5198B TO- 3Ppackage which can be installed to the heat sink with one screw APPLICATIONS Suitable for use in 70W high fidelity audio ampl

文件：227.49 Kbytes 页数：3 Pages

NELLSEMI

尼尔半导体

Power Amplifier Applications4

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

文件：163.38 Kbytes 页数：4 Pages

TOSHIBA

东芝