PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor FEATURES High voltage VCEO=-50V. Excellent HFELinearity. High DC current gain : hFE=200 typ. Complementary to 2SC4177. APPLICATIONS Audio frequency general purpose amplifier applications.

文件：206.7 Kbytes 页数：4 Pages

BILIN

银河微电

PNP Silicon Epitaxial Planar Transistor

Galaxy

银河微电

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

文件：280.38 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

PNP Silicon Epitaxia

■ Features ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

文件：48 Kbytes 页数：1 Pages

KEXIN

科信电子

Plastic-Encapsulated Transistors

SOT-323 Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

文件：128.52 Kbytes 页数：2 Pages

TEL