PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC

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NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

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ISC

无锡固电

Silicon Power Transistors

Features ● Large current capacity. ● High hFE and low collector saturation voltage.

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KEXIN

科信电子

P TYPE TTANSISTORS

P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and

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STANSON

司坦森

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. • Large current capacity: IC(DC) = −10 A, IC(pulse) = −15 A\n• High hFE and low collector saturation voltage: hFE = 200 MIN. (VCE = −2.0 V, IC = −0.5 A) VCE(sat) ≤ −0.25 V (IC = −4.0 A, IB = −0.05 A);

Renesas

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