2SA1625

PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching)

DESCRIPTION The2SA1625isdesignedforgeneralpurposeamplifierandhighspeedswitchingapplications.

2SA1625

Plastic-Encapsulated Transistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:750mW(Tamb=25℃) Collectorcurrent ICM:-0.5A Collector-basevoltage V(BR)CBO:-400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SA1625

TRANSISTOR (PNP)

FEATURES Powerdissipation PCM:750mW(Tamb=25℃) Collectorcurrent ICM:-0.5A Collector-basevoltage V(BR)CBO:-400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SA1625

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●HighVoltage ●HighSpeedSwitching ●LowCollectorSaturationVoltage

2SA1625

Marking：A1625；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features HighVoltage HighSpeedSwitching LowCollectorSaturationVoltage

2SA1625

PNR SILICON TRANSISTOR

DESCRIPTION The25A1625isdesignedforgeneralpurposeamplifierandhighspeed switchingapplications. FEATURES -HighVoltage. -HighSpeedSwitching. -LowCollectorSaturationVoltage.

2SA1625-TA

Marking：A1625；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features HighVoltage HighSpeedSwitching LowCollectorSaturationVoltage