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2SA1615-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

文件:323.37 Kbytes 页数:3 Pages

ISC

无锡固电

2SA1615-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

文件:304.31 Kbytes 页数:3 Pages

ISC

无锡固电

2SA1615-Z

Silicon Power Transistors

Features ● Large current capacity. ● High hFE and low collector saturation voltage.

文件:41.3 Kbytes 页数:1 Pages

KEXIN

科信电子

2SA1615-Z

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC

文件:118.88 Kbytes 页数:6 Pages

NEC

瑞萨

2SA1615-Z

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

文件:240.04 Kbytes 页数:2 Pages

ISC

无锡固电

2SA1615-Z

P TYPE TTANSISTORS

P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and

文件:187.76 Kbytes 页数:4 Pages

STANSON

司坦森

2SA1617

Silicon PNP Epitaxial

Silicon PNP Epitaxial Application High voltage amplifier

文件:24.07 Kbytes 页数:5 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SA1617

Silicon PNP Epitaxial

Silicon PNP Epitaxial

文件:35.65 Kbytes 页数:1 Pages

KEXIN

科信电子

2SA1618

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • Complementary to 2SC4207

文件:142.37 Kbytes 页数:2 Pages

TOSHIBA

东芝

2SA1619

Silicon PNP epitaxial planer type

■ Features ● Complementary pair with 2SC4208 and 2SC4208A. ● Allowing supply with the radial taping and automatic insertion possible.

文件:47.26 Kbytes 页数:3 Pages

PANASONIC

松下

晶体管资料

  • 型号:

    2SA1612

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    表面帖装型 (SMD)_通用型 (Uni)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    120V

  • 最大电流允许值:

    0.05A

  • 最大工作频率:

    >50MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SA1578,2SA1579,2SA1587,2SB1220,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-15

  • vtest:

    120

  • htest:

    50000100

  • atest:

    0.05

  • wtest:

    0

技术参数

  • VCEO (V):

    -120

  • IC @25 °C (A):

    -0.05

  • VCE (sat) (V):

    -0.3

  • hFE:

    135-900

  • Pc (W):

    0.15

  • fT (Typical) (GHz):

    0.09

  • Cob (Typical) (pF):

    2

供应商型号品牌批号封装库存备注价格
NEC
14+无铅
SOT-323
25700
优势产品,博盛微热卖!!!
询价
RENESAS/瑞萨
20+
SOT-323
120000
原装正品 可含税交易
询价
RENESAS/瑞萨
2025+
SOT-323
5000
原装进口价格优 请找坤融电子!
询价
NEC
24+
SOT-323
128450
新进库存/原装
询价
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
24+
5000
只做原装公司现货
询价
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
NEC
24+
6540
原装现货/欢迎来电咨询
询价
RENESAS/瑞萨
23+
SOT-323
472684
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
NK/南科功率
2025+
SOT-323
986966
国产
询价
更多2SA161供应商 更新时间2025-8-11 11:50:00