Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@lc= -6A • Good Linearity of hFE • High Switching Speed • Complement to Type 2SC3710 APPLICATIONS • Designed for high current switching applications

文件：183.74 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3710 APPLICATIONS • High current switching applications

文件：172.65 Kbytes 页数：4 Pages

SAVANTIC

TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −6 A) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SC3710A

文件：220.27 Kbytes 页数：4 Pages

TOSHIBA

东芝

Epitaxial Planar PNP Silicon Transistor

Features ● High breakdown voltage:VCEO=-120V ● Low noise design:NF=0.2dB(Typ.)

文件：36.72 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP SILICON TRANSISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：189.64 Kbytes 页数：3 Pages

NEC

瑞萨

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA1459 is designed for general purpose amplifier and high speed switching applications. FEATURES ● High Frequency Current Gain. ● High Speed Switching. ● Small Output Capacitance. ● Low Collector Saturation Voltage.

文件：151.99 Kbytes 页数：3 Pages

NEC

瑞萨

Silicon PNP Power Transistors

文件：218.47 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件：218.47 Kbytes 页数：4 Pages

JMNIC

锦美电子

High-Speed, High-Current Switching Applications

文件：154.77 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Speed, High-Current Switching Applications

文件：154.77 Kbytes 页数：5 Pages

TOSHIBA

东芝