TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3709A

文件：218 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@lc= -6A • Good Linearity of hFE • High Switching Speed • Complement to Type 2SC3709A APPLICATIONS • Designed for high current switching applications

文件：181.52 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High-Speed, High-Current Switching Applications

文件：154.77 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Speed, High-Current Switching Applications

文件：154.77 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Speed, High-Current Switching Applications

文件：154.77 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Polarity：PNP\nComplementary Product：2SC3709A\nRoHS Compatible Product(s) (#)：Available Collector Current IC -12 A \nCollector-emitter voltage VCEO -50 V ;

Toshiba

东芝