Low-Frequency Driver Applications

Low-Frequency Driver Applications Features • Adoption of FBET process. • AF amp, AF power amp. • High breakdown voltage : VCEO>80V

文件：112.39 Kbytes 页数：4 Pages

SANYO

三洋

TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3709A

文件：218 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION · • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3709 APPLICATIONS • High current switching applications

文件：162.5 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION · • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3709 APPLICATIONS • High current switching applications

文件：218.47 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION · • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3709 APPLICATIONS • High current switching applications

文件：171.53 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@lc= -6A • Good Linearity of hFE • High Switching Speed • Complement to Type 2SC3709A APPLICATIONS • Designed for high current switching applications

文件：181.52 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3709A

文件：218 Kbytes 页数：4 Pages

TOSHIBA

东芝

TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −6 A) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SC3710A

文件：220.27 Kbytes 页数：4 Pages

TOSHIBA

东芝

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage-: V CE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS ·Designed for high current switching applications

文件：110.54 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3710 APPLICATIONS • High current switching applications

文件：218.92 Kbytes 页数：4 Pages

JMNIC

锦美电子