Silicon PNP Epitaxial

Features ● High voltage: VCEO = -50 V (min) ● Small package

文件：36 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：ACO；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) Complements to the 2SC3325.

文件：1.50817 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Audio Frequency Low Power Amplifier Applications

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package

文件：198.34 Kbytes 页数：4 Pages

TOSHIBA

东芝

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package

文件：198.34 Kbytes 页数：4 Pages

TOSHIBA

东芝

Audio Power Applications

Features ● Low Saturation Voltage : VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA) ● Small Flat Package ● Complementary to 2SC2982

文件：352.75 Kbytes 页数：2 Pages

KEXIN

科信电子

TRANSISTOR (STROBE FLASH, AUDIO POWER APPLICATIONS)

Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1)= 140 to 600 (VCE= −1 V, IC= −0.5 A) : hFE (2)= 60 (min), 120 (typ.), (VCE= －1 V, IC= −4 A) • Low saturation voltage : VCE (sat)= −0.5 V (max) (IC= −2 A, IB

文件：164.21 Kbytes 页数：3 Pages

TOSHIBA

东芝

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3328

文件：202.62 Kbytes 页数：4 Pages

TOSHIBA

东芝

TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)

For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) • Low pulse noise. Low 1/f noise • Low base spreading resistance: rb

文件：225.91 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Low rbb′, low noise figure, complementary pair with 2SC3329 Applications Low noise audio amplifier applications.

文件：756.25 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

PNP/NPN Epitaxial Planar Silicon Transistors

AF Amp Applications Use • Capable of being used in the low frequency to high frequency range. Features • Large current capacity and wide ASO.

文件：144.29 Kbytes 页数：3 Pages

SANYO

三洋