Power MOSFET

文件：1.29134 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：2N80K5；Package：DPAK；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.63181 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

丝印：2N80K5；Package：TO-220FP；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.63181 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

丝印：2N80K5；Package：TO-220；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.63181 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

丝印：2N80K5；Package：IPAK；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.63181 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

2A, 800V N-CHANNEL POWER MOSFET

The UTC 2N80Z is an N-channel mode power MOSFET usingUTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanche • RDS(on) = 6.3Ω @VGS = 10 V \n• High switching speed;

UTC

友顺

NPN双极型晶体管

YZJiangxin

江新