2 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件：170.28 Kbytes 页数：6 Pages

UTC

友顺

2A, 800V N-CHANNEL POWER MOSFET

文件：235.68 Kbytes 页数：6 Pages

UTC

友顺

Drain Current ID= 2.4A@ TC=25C

文件：68.07 Kbytes 页数：2 Pages

ISC

无锡固电

2A, 800V N-CHANNEL POWER MOSFET

The UTC 2N80 is an N-channel mode power MOSFET usingUTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanche a • RDS(on) = 6.3Ω @VGS = 10 V \n• High switching speed;

UTC

友顺

GERMABIUM PNP MESA TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS

文件：1.1394 Mbytes 页数：2 Pages

AMMSEMI

2.0A, 800V NHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab

文件：663.9 Kbytes 页数：9 Pages

UTC

友顺

2.0A, 800V NHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab

文件：663.9 Kbytes 页数：9 Pages

UTC

友顺

2.0A, 800V NHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab

文件：663.9 Kbytes 页数：9 Pages

UTC

友顺

2.0A, 800V NHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab

文件：663.9 Kbytes 页数：9 Pages

UTC

友顺

2.0A, 800V NHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab

文件：663.9 Kbytes 页数：9 Pages

UTC

友顺