2N7002T

N-ChannelEnhancementMOSFET

2N7002T

N-ChannelPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •LowON-ResistanceandlowInputCapacitance •LowGateThresholdVoltage •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLead

2N7002T

SmallSignalMOSFETTransistor

FEATURES ●Lowon-resistance. ●Lowgatethresholdvoltge. ●Lowinputcapacitance. ●Fastswitchingspeed. ●Lowinput/outputleakage. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)

2N7002T

MOSFET(N-Channel)

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002T

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA ●RDS(ON)

2N7002T

SOT-523Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected Applications ●DC/DCConverter ●LoadSwitchforPortableDevices ●BatterySwitch

2N7002T

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA ●RDS(ON)

2N7002T

SOT-523Plastic-EncapsulateMOSFETS

MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halogenfreeproductforpackingcodesuffi

2N7002T

MOSFET(N-Channel)

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃