2N7002KW

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

2N7002KWA

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •LowInput/OutputLeakage •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponreques

2N7002KW-AU

60VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@500mA

2N7002KW-CAR

N-ChannelMOSFET

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcap

2N7002KWQ

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002KX

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance (RDS(ON))andyetmaintainsuperiorswitchingperformance,makingit idealforhighefficiencypowermanagementapplications. Applications MotorControl PowerManagementFunctions Backlighting Features

2N7002L

SmallSignalMOSFET60V,115mA,N-ChannelSOT-23

SmallSignalMOSFET60V,115mA,N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable

2N7002L

60V,115mA,N-CHANNELMOSFET

2N7002L

SmallsignalMOSFET

2N7002L

SmallSignalMOSFET