2N7002E数据手册分立半导体产品的晶体管-FETMOSFET-单个规格书PDF

描述 Description

General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

特性 Features

■ Logic level threshold compatible
■ Surface-mounted package
■ Very fast switching
■ TrenchMOS technologyApplications
■ Logic level translator 
■ High-speed line driverQuick reference data
■ VDS ≤ 60 V
■ RDSon ≤ 3 Ω
■ ID ≤ 385 mA
■ Ptot ≤ 0.83 W

应用 Application

■ Logic level translator 
■ High-speed line driverQuick reference data
■ VDS ≤ 60 V
■ RDSon ≤ 3 Ω
■ ID ≤ 385 mA
■ Ptot ≤ 0.83 W